Product Summary

The TGA2924-SG is a high power amplifier that provides 12 dB of gain, 10 W of output power at 2.6 GHz and 2.5% EVM at 30 dBm output power. The TGA2924-SG is ideally suited for high linearity, high power wireless data applications such as MMDS point-to-point or point-to-multipoint radios. The package has a high thermal conductivity copper alloy base. Internal partial matching simplifies system board layout by requiring a minimum of external components. The part is lead-free and RoHS compliant. Evaluation boards are available upon request. The applications of the TGA2924-SG include MMDS Pt-Pt and Pt-Multi Pt Radio, S-Band Power Amplifiers.

Parametrics

TGA2924-SG absolute maximum ratings: (1)Vd, Drain Supply Voltage: 10 V; (2)Vg, Gate Supply Voltage Range: 0 V to -5 V; (3)Idq, Drain Supply Current (Quiescent): 4 A; (4)| Ig |, Gate Current: 39 mA; (5)PIN, Input Continuous Wave Power: 39 dBm; (6)PD, Power Dissipation: 11.2 W; (7)TCH, Operating Channel Temperature: 175℃; (8)TM, Mounting Temperature (30 Seconds): 260℃; (9)TSTG, Storage Temperature: -65 to 150℃.

Features

TGA2924-SG features: (1)2.6 GHz application frequency range; (2)12 dB nominal gain; (3)40 dBm nominal Psat; (4)2.5% EVM at 30 dBm output power; (5)Internally partially matched; (6)IMD3 -45 dBc @ 28 dBm SCL, typical; (7)Bias conditions: 8 V @ 1.2 A (quiescent); (8)0.5 um HFET technology; (9)2 lead Cu-alloy base package.

Diagrams

TGA2924-SG block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
TGA2924-SG
TGA2924-SG

Triquint Semiconductor Inc

AMPLIFIER MMDS 2.6GHZ 10W HFET

Data Sheet

1-500: $17.50
TGA2924-SG-T/R
TGA2924-SG-T/R

TriQuint Semiconductor

RF Amplifier 10W 2.6 GHz HPA

Data Sheet

Negotiable